HiTUS enables:
- High rate deposition of dielectric materials; often providing faster rates than the pure metal
- Thick deposition of dielectrics
HiTUS uses a remote plasma generation that results in a uniform, high ion density plasma at the target surface. As the target surface is uniformly eroded, the target maintains a metallic state even in the addition of gases such as oxygen or nitrogen (required for the reactive deposition of dielectric materials). The sputter yield from a metal is higher than that from a compound, thus HiTUS dielectric deposition rates are up to ten times faster than those of conventional sputtering.
