With the University of Cambridge PQL have been developing high mobility thin film transistors (TFTs) based on amorphous transparent metal-oxides.
The properties of the high mobility thin film transistors – TFTs are as follows:
- Mobility ~ 10 cm2V-1s-1
- Switching ratio > 106
- Can be deposited into flexibles (Low temperature process)
- Fully transparent options
- InZnO or ZnO channel
- Accurate control of the resistivity of the channel from insulating (ρ=3×1010Ω.cm) to conducting (ρ=3×10-3Ω.cm)
