High Mobility TFTs

With the University of Cambridge PQL have been developing high mobility thin film transistors (TFTs) based on amorphous transparent metal-oxides.

The properties of the high mobility thin film transistors – TFTs  are as follows:

  • Mobility ~ 10 cm2V-1s-1
  • Switching ratio > 106
  • Can be deposited into flexibles (Low temperature process)
  • Fully transparent options
  • InZnO or ZnO channel
  • Accurate control of the resistivity of the channel from insulating (ρ=3×1010Ω.cm) to conducting (ρ=3×10-3Ω.cm)



If you would like to discuss your trial requirements, obtain costing, turnaround times, or for any other questions, we would love to hear from you.