High Rate Dielectrics

HiTUS enables high rate deposition of dielectric materials; often providing faster rates than the pure metal. This is an underlying advantage of using remote plasma generation that results in a uniform, high ion density at the target surface. The result of this is that, with the application of a negative target bias, uniform sputtering of the target surface ensues and thus the target maintains a metallic state even following the addition of gases such as oxygen or nitrogen that are required for the reactive deposition of dielectric materials. It is well documented that the sputter yield from a metal is higher than that from a compound and thus dielectric deposition rates up to ten times faster than those of conventional magnetron sputtering can be achieved using HiTUS.

Interested?

If you would like to discuss your trial requirements, obtain costing, turnaround times, or for any other questions, we would love to hear from you.