Plasma Quest Limited in collaboration with Cambridge University have been developing high mobility alternatives to a-Si:H thin film transistor (TFT) devices based on amorphous transparent metal-oxides.
The properties of these thin film transistors – TFTs – are as follows:
- Mobility ~ 10 cm2V-1s-1
- Switching ratio > 106
- Can be deposited into flexibles (Low temperature process)
- Fully transparent options
- InZnO or ZnO channel
- Accurate control of the resistivity of the channel from insulating (ρ=3×1010Ω.cm) to conducting (ρ=3×10-3Ω.cm)
