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Zinc Oxide (ZnO)

 

Zinc oxide (ZnO) has have been identified as promising alternatives to hydrogenated amorphous silicon in thin film transistors (TFTs).

  • Deposition as ambient temperatures
  • Rate – 50nm/min
  • Field Effect Mobility 0.2 cm2V-1s-1

Download our latest publication on ZnO and IZO films for TFT applications.pdf