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You are here: Materials > Indium Zinc Oxide (IZO)

Indium Zinc Oxide (IZO)

IZO is a promising transparent conducting oxide as well as another alternative to hydrogenated amorphous silicon in thin film transistors (TFTs).

• Deposition as ambient temperatures
• Rate 84nm/min
• Field Effect Mobility can be varied from 3x10^-9 Ω^-1m^-1 to 4x10⁴ Ω^-1m^-1
• Mobility of 20 cm²V^-1s^-1has a switching ratio in excess of 10⁶
• Resistivity of 5.6x10^-4 Ωcm films with peak transmission of 96%
• 0.129nm RMS roughness
• Reactive sputtering from a 50:50 at% In:Zn target

Download our latest publication on ZnO and IZO films for TFT applications.pdf