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You are here: Materials > Hafnia (HfO₂)

Hafnia (HfO₂)

PQL's Hafnia films have recently been used to form the gate inslating layer for thin film transistors (TFT).

• High dielectric constants (k=23 for HfO₂) suitable for high performance devices. Breakdown >10MVcm^-1
• Resistivity2.5x10¹³Ω.cm
• Opital transmission of full TFT device >90%.
• Low temperature process