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You are here: Applications > High Mobility TFTs

High Mobility TFTs (Thin Film Transistors)

Plasma Quest Limited in collaboration with Cambridge University have been developing high mobility alternatives to a-Si:H TFT devices based on amorphous transparent metal-oxides.

The properties of these TFT are as follows:

• Mobility ~ 10 cm²V^-1S^-1
• Switching ratio > 10⁶
• Can be deposited into flexibles (Low temperature process)
• Fully transparent options
• InZnO or ZnO channel
• Accurate control of the resistivity of the channel from insulating (p=3x10¹⁰Ω.cm) to conducting (p=3x10^-3Ω.cm)

Download printable version of High Mobility TFTs.pdf
Download printable version of ZnO and HfO2 summary.pdf