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Electroluminescence Devices

 

Plasma Quest Electroluminescence Devices

Due to the excellent PL results, the ZnS:Mn films have also been incorporated into electroluminescent (EL) devices on silicon, glass and polymeric substrate materials. The standard double insulating layer structure has been adopted with the ZnS:Mn being sandwiched between two dielectric layers.

  • Completely transparent structures,
  • Various dielectric materials consisting of Y2O3, Ta2O5, Al2O3 and AlN have been investigated
  • No substrate heating or post deposition annealing
  • A turn on voltage of 122 V (RMS)
  • Maximum luminance of 75 Cdm-2 at approximately 195 V (RMS).
  • Optical transparency is 95%.
  • A complete, working device with a thickness of 1.8 um can be deposited in just over 30 minutes.

Download our latest publication on Electroluminescence Devices.pdf