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Electroluminescence Devices

Due to the excellent PL results, the ZnS:Mn films have also been incorporated into electroluminescent (EL) devices on silicon, glass and polymeric substrate materials. The standard double insulating layer structure has been adopted with the ZnS:Mn being sandwiched between two dielectric layers.
- Completely transparent structures,
- Various dielectric materials consisting of Y2O3, Ta2O5, Al2O3 and AlN have been investigated
- No substrate heating or post deposition annealing
- A turn on voltage of 122 V (RMS)
- Maximum luminance of 75 Cdm-2 at approximately 195 V (RMS).
- Optical transparency is 95%.
- A complete, working device with a thickness of 1.8 um can be deposited in just over 30 minutes.
Download our latest publication on Electroluminescence Devices.pdf

